The 1N5399 is a silicon rectifier diode with a maximum operating temperature of 175 degrees Celsius. It features a DO-41 package with 2 pins and an axial terminal position. The diode element is made of silicon and has a rectifier diode type. It can withstand a maximum reverse voltage of 1000 volts.
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Technical Specifications
International Semiconductor 1N5399 technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-41 |
| Pin Count | 2 |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 1000 |
Compliance
| HTS Code | 8541.10.00.80 |
| REACH | unknown |
| Military Spec | False |
Datasheet
International Semiconductor 1N5399 Datasheet
Download the complete datasheet for International Semiconductor 1N5399 to view detailed technical specifications.
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