General purpose rectifier diode, 1-phase, 1-element, 3A current rating, with a maximum repetitive peak reverse voltage of 600V. Features a silicon diode element and operates up to a maximum of 175°C. This two-terminal device has axial terminals.
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Technical Specifications
International Semiconductor 1N5552 technical specifications.
General
Max Operating Temperature
175
Number of Terminals
2
Terminal Position
AXIAL
Number of Elements
1
Diode Element Material
SILICON
Diode Type
RECTIFIER DIODE
Rep Pk Reverse Voltage-Max
600
Compliance
HTS Code
8541.10.00.80
REACH
unknown
Military Spec
False
Datasheet
International Semiconductor 1N5552 Datasheet
Download the complete datasheet for International Semiconductor 1N5552 to view detailed technical specifications.
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