The 1N5747B is a unidirectional silicon zener diode with a maximum operating temperature of 200°C. It features a DO-35 package with two terminals in an axial configuration. This zener diode has a maximum power dissipation of 0.4 watts and is constructed from a single silicon element.
PolarityUNIDIRECTIONAL
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Technical Specifications
International Semiconductor 1N5747B technical specifications.
General
| Max Operating Temperature | 200 |
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-35 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | ZENER DIODE |
| Power Dissipation-Max | 0.4 |
Compliance
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
Datasheet
International Semiconductor 1N5747B Datasheet
Download the complete datasheet for International Semiconductor 1N5747B to view detailed technical specifications.
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