The 1N6010B is a unidirectional silicon zener diode with a maximum operating temperature of 200°C and a maximum power dissipation of 0.5W. It has a DO-35 axial package with two terminals. The diode element is made of silicon and has a zener diode type. The 1N6010B is suitable for use in high-temperature applications.
PolarityUNIDIRECTIONAL
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Technical Specifications
International Semiconductor 1N6010B technical specifications.
General
| Max Operating Temperature | 200 |
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| JEDEC Package Code | DO-35 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | ZENER DIODE |
| Power Dissipation-Max | 0.5 |
Compliance
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
Datasheet
International Semiconductor 1N6010B Datasheet
Download the complete datasheet for International Semiconductor 1N6010B to view detailed technical specifications.
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