The SMBG51A is a silicon transient voltage suppressor diode with a maximum operating temperature of 150 degrees Celsius and a minimum operating temperature of -40 degrees Celsius. It has a unidirectional polarity and is made of silicon. The diode has a maximum reverse voltage of 51V and a maximum power dissipation of 1W. It is available in a dual-pin package type R-PDSO-G2.
PolarityUNIDIRECTIONAL
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Technical Specifications
International Semiconductor SMBG51A technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -40 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 51 |
| Breakdown Voltage-Min | 56.7 |
| Non-rep Peak Rev Power Dis-Max | 600 |
| Clamping Voltage-Max | 82.4 |
| Breakdown Voltage-Nom | 59.7 |
| Breakdown Voltage-Max | 62.7 |
| Power Dissipation-Max | 1 |
Compliance
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
Datasheet
International Semiconductor SMBG51A Datasheet
Download the complete datasheet for International Semiconductor SMBG51A to view detailed technical specifications.
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