Dual NPN bipolar junction transistor array in a 14-SOIC package for surface mounting. Features a 10GHz transition frequency and gain bandwidth product, with a maximum collector current of 30mA. Offers a collector-emitter voltage of 8V and a collector base voltage of 12V. Operates within a temperature range of -40°C to 85°C, with a power dissipation of 250mW. This component is RoHS compliant and lead-free.
Intersil HFA3102BZ96 technical specifications.
| Package/Case | SOIC |
| Collector Base Voltage (VCBO) | 12V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector-emitter Voltage-Max | 8V |
| Continuous Collector Current | 30mA |
| Current Rating | 30mA |
| Emitter Base Voltage (VEBO) | 12V |
| Frequency | 10GHz |
| Gain | 17.5dB |
| Gain Bandwidth Product | 10GHz |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 30mA |
| Max Frequency | 10GHz |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 10GHz |
| DC Rated Voltage | 8V |
| RoHS | Compliant |
Download the complete datasheet for Intersil HFA3102BZ96 to view detailed technical specifications.
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