N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 600V breakdown voltage and 75A continuous collector current. This discrete semiconductor component offers a maximum operating temperature of 150°C and is housed in a TO-247 package with three terminals. It comprises a single element for efficient power switching applications.
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Technical Specifications
Intersil HGTG30N60A4D technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-247 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Intersil HGTG30N60A4D Datasheet
Download the complete datasheet for Intersil HGTG30N60A4D to view detailed technical specifications.
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