High-speed 9Mbit parallel SRAM featuring 3.1ns access time and 200MHz maximum frequency. This integrated circuit offers 256k words with a 36-bit word size, utilizing an 18-bit address bus. Operating from 3.135V to 3.465V, it supports a wide temperature range of -40°C to 85°C. The component is packaged in a TQFP with RoHS compliance.
Frequency200MHz
PackageTQFP
Current275mA
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Technical Specifications
Issi IS61LPS25636A-200TQLI technical specifications.
General
| Access Time | 3.1ns |
| Access Time-Max | 3.1ns |
| Address Bus Width | 18b |
| Package/Case | TQFP |
| Density | 9Mb |
| Frequency | 200MHz |
| Interface | Parallel |
| Max Frequency | 200MHz |
| Max Operating Temperature | 85°C |
| Max Supply Voltage | 3.465V |
| Memory Size | 9Mb |
| Memory Type | RAM, |
| Min Operating Temperature | -40°C |
| Min Supply Voltage | 3.135V |
| Number of Ports | 4 |
| Number of Words | 256000 |
| Operating Supply Voltage | 3.3V |
| Package Quantity | 72 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Supply Current | 275mA |
| Sync/Async | Synchronous |
| Word Size | 36b |
Compliance
| RoHS | Compliant |
Datasheet
Issi IS61LPS25636A-200TQLI Datasheet
Download the complete datasheet for Issi IS61LPS25636A-200TQLI to view detailed technical specifications.
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