9Mb Parallel SRAM IC featuring 3.1ns access time and 200MHz maximum frequency. This synchronous memory offers an 18-bit address bus and 36-bit word size, with 256,000 words of storage. Operating from a 3.3V supply, it boasts four ports and is housed in a 165TFBGA package. Suitable for a wide temperature range of -40°C to 85°C, this RoHS compliant component is available in rail/tube packaging.
Frequency200MHz
PackageBGA
Current280mA
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Technical Specifications
Issi IS61NLP25636A-200B3LI technical specifications.
General
Access Time
3.1ns
Access Time-Max
3.1ns
Address Bus Width
18b
Package/Case
BGA
Density
9Mb
Frequency
200MHz
Interface
Parallel
Max Frequency
200MHz
Max Operating Temperature
85°C
Min Operating Temperature
-40°C
Max Supply Voltage
3.465V
Memory Size
9Mb
Memory Type
SDR, , Volatile, SRAM
Min Supply Voltage
3.135V
Number of Ports
4
Number of Words
256000
Operating Supply Voltage
3.3V
Package Quantity
144
Packaging
Rail/Tube
Radiation Hardening
No
RoHS Compliant
Yes
Supply Current
280mA
Sync/Async
Synchronous
Word Size
36b
Compliance
RoHS
Compliant
Datasheet
Issi IS61NLP25636A-200B3LI Datasheet
Download the complete datasheet for Issi IS61NLP25636A-200B3LI to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.