9Mb Parallel SRAM IC featuring 3.1ns access time and 200MHz maximum frequency. This synchronous memory offers an 18-bit address bus and 36-bit word size, with 256,000 words of storage. Operating from a 3.3V supply, it boasts four ports and is housed in a 165TFBGA package. Suitable for a wide temperature range of -40°C to 85°C, this RoHS compliant component is available in rail/tube packaging.
Frequency200MHz
PackageBGA
Current280mA
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Technical Specifications
Issi IS61NLP25636A-200B3LI technical specifications.
General
| Access Time | 3.1ns |
| Access Time-Max | 3.1ns |
| Address Bus Width | 18b |
| Package/Case | BGA |
| Density | 9Mb |
| Frequency | 200MHz |
| Interface | Parallel |
| Max Frequency | 200MHz |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Max Supply Voltage | 3.465V |
| Memory Size | 9Mb |
| Memory Type | SDR, , Volatile, SRAM |
| Min Supply Voltage | 3.135V |
| Number of Ports | 4 |
| Number of Words | 256000 |
| Operating Supply Voltage | 3.3V |
| Package Quantity | 144 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Supply Current | 280mA |
| Sync/Async | Synchronous |
| Word Size | 36b |
Compliance
| RoHS | Compliant |
Datasheet
Issi IS61NLP25636A-200B3LI Datasheet
Download the complete datasheet for Issi IS61NLP25636A-200B3LI to view detailed technical specifications.
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