18Mb Parallel SRAM IC featuring a 3.1ns access time and 200MHz maximum frequency. This synchronous memory utilizes a pipelined architecture with a 19-bit address bus and 36-bit word size. Operating from 2.375V to 2.625V, it offers four ports and 512,000 words, packaged in a 100-TQFP with gull-wing terminals. Designed for industrial temperature ranges (-40°C to 85°C), this lead-free, RoHS-compliant component is surface-mount compatible.
Frequency200MHz
PackageTQFP
Current475mA
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Technical Specifications
Issi IS61NVP51236-200TQLI technical specifications.
General
Access Time
3.1ns
Access Time-Max
3.1ns
Additional Feature
PIPELINED ARCHITECTURE
Address Bus Width
19b
Package/Case
TQFP
Density
18Mb
Frequency
200MHz
Interface
Parallel
JESD-30 Code
R-PQFP-G100
Lead Free
Lead Free
Max Frequency
200MHz
Max Operating Temperature
85°C
Max Supply Voltage
2.625V
Memory Size
18Mb
Memory Type
SDR, , Volatile, SRAM
Memory Width
36
Min Operating Temperature
-40°C
Min Supply Voltage
2.375V
Moisture Sensitivity Level
3
Number of Functions
1
Number of Ports
4
Number of Words
512000
Operating Supply Voltage
2.5V
Package Body Material
Plastic
Package Quantity
72
Package Shape
Rectangular
Packaging
Rail/Tube
Parallel/Serial
PARALLEL
Peak Reflow Temperature (Cel)
260°C
Radiation Hardening
No
RoHS Compliant
Yes
Supply Current
475mA
Surface Mount
Yes
Sync/Async
Synchronous
Technology
CMOS
Temperature Grade
INDUSTRIAL
Terminal Finish
Tin
Terminal Form
Gull Wing
Terminal Position
QUAD
Time @ Peak Reflow Temperature-Max (s)
40s
Width
14mm
Word Size
36b
Compliance
RoHS
Compliant
Datasheet
Issi IS61NVP51236-200TQLI Datasheet
Download the complete datasheet for Issi IS61NVP51236-200TQLI to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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