
Asynchronous SRAM chip, 2Mb density, featuring a 128K x 16 configuration for 16-bit word size. Offers a fast 10ns access time and operates with a 2.5V/3.3V supply voltage range (2.4V to 3.6V). This component utilizes a parallel interface and comes in a 44-pin TSOP-II package. Designed for a wide operating temperature range from -40°C to 85°C, it is RoHS compliant.
Issi IS61WV12816DBLL-10TLI technical specifications.
| Access Time | 10ns |
| Access Time-Max | 10ns |
| Address Bus Width | 17b |
| Package/Case | TSOP |
| Density | 2Mb |
| Height | 1.05mm |
| Interface | Parallel |
| Length | 18.54mm |
| Max Operating Temperature | 85°C |
| Max Supply Voltage | 3.6V |
| Memory Size | 2Mb |
| Memory Type | SDR, , RAM, SRAM - Asynchronous |
| Min Operating Temperature | -40°C |
| Min Supply Voltage | 2.4V |
| Number of Ports | 1 |
| Number of Words | 128000 |
| Package Quantity | 135 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Supply Current | 65mA |
| Sync/Async | Asynchronous |
| Width | 10.29mm |
| Word Size | 16b |
| RoHS | Compliant |
Download the complete datasheet for Issi IS61WV12816DBLL-10TLI to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
