8Mb Asynchronous SRAM with a 10ns access time, featuring a 19-bit address bus and a 16-bit word size. This integrated circuit offers a parallel interface and operates across a voltage range of 2.4V to 3.6V, with a maximum operating temperature of 85°C. Packaged in TFBGA, this RoHS compliant component is suitable for demanding applications.
PackageTFBGA
Current95mA
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Technical Specifications
Issi IS61WV51216BLL-10MLI technical specifications.
General
| Access Time | 10ns |
| Access Time-Max | 10ns |
| Address Bus Width | 19b |
| Package/Case | TFBGA |
| Density | 8Mb |
| Interface | Parallel |
| Lead Free | Lead Free |
| Max Operating Temperature | 85°C |
| Memory Size | 8Mb |
| Memory Type | RAM, , SRAM - Asynchronous, SDR |
| Min Operating Temperature | -40°C |
| Max Supply Voltage | 3.6V |
| Min Supply Voltage | 2.4V |
| Number of Ports | 1 |
| Number of Words | 512000 |
| Package Quantity | 220 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Supply Current | 95mA |
| Sync/Async | Asynchronous |
| Word Size | 16b |
Compliance
| RoHS | Compliant |
Datasheet
Issi IS61WV51216BLL-10MLI Datasheet
Download the complete datasheet for Issi IS61WV51216BLL-10MLI to view detailed technical specifications.
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