N-Channel Silicon Metal-Oxide Semiconductor FET for surface mount applications. Features a 350V drain-source voltage, 5mA continuous drain current, and 14 Ohm drain-source on-resistance. Operates within a temperature range of -40°C to 85°C with a maximum power dissipation of 2.5W. Includes 300pF input capacitance and is RoHS compliant.
PackageSOT-223
Current Rating5mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Ixys CPC5602CTR technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 5mA |
| Current Rating | 5mA |
| Drain to Source Resistance | 14R |
| Drain to Source Voltage (Vdss) | 350V |
| Drain-source On Resistance-Max | 14R |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 300pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 14R |
| RoHS Compliant | Yes |
| Series | CPC5602 |
| DC Rated Voltage | 350V |
| Weight | 0.008826oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys CPC5602CTR Datasheet
Download the complete datasheet for Ixys CPC5602CTR to view detailed technical specifications.
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