N-Channel Silicon Metal-Oxide Semiconductor FET for surface mount applications. Features a 350V drain-source voltage, 5mA continuous drain current, and 14 Ohm drain-source on-resistance. Operates within a temperature range of -40°C to 85°C with a maximum power dissipation of 2.5W. Includes 300pF input capacitance and is RoHS compliant.
PackageSOT-223
Current Rating5mA
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Ixys CPC5602CTR technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
5mA
Current Rating
5mA
Drain to Source Resistance
14R
Drain to Source Voltage (Vdss)
350V
Drain-source On Resistance-Max
14R
Gate to Source Voltage (Vgs)
20V
Input Capacitance
300pF
Lead Free
Lead Free
Max Operating Temperature
85°C
Min Operating Temperature
-40°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
14R
RoHS Compliant
Yes
Series
CPC5602
DC Rated Voltage
350V
Weight
0.008826oz
Compliance
RoHS
Compliant
Datasheet
Ixys CPC5602CTR Datasheet
Download the complete datasheet for Ixys CPC5602CTR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.