Ixys
DE275-102N06A
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, D2, 6 PIN
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, D2, 6 PIN
Resistance1.6R
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Technical Specifications
Ixys DE275-102N06A technical specifications.
General
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 1.6R |
| Lead Free | Lead Free |
| Resistance | 1.6R |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Ixys DE275-102N06A Datasheet
Download the complete datasheet for Ixys DE275-102N06A to view detailed technical specifications.
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