RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, D2, 6 PIN
Ixys DE275-102N06A technical specifications.
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 1.6R |
| Lead Free | Lead Free |
| Resistance | 1.6R |
| RoHS Compliant | Yes |
| RoHS | Compliant |
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