The DE275-501N16A is a high-power MOSFET from Ixys with a maximum operating temperature of 175°C and a maximum power dissipation of 590W. It features a continuous drain current of 16A and a drain-to-source breakdown voltage of 500V. The device is packaged in a D2, 6 PIN package and is compliant with RoHS regulations. It is not compliant with Reach SVHC regulations.
Package100
Power590W
Quick Jump:
Technical Specifications
Ixys DE275-501N16A technical specifications.
General
| Package/Case | 100 |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Voltage (Vdss) | 500V |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Max Power Dissipation | 590W |
| Power Dissipation | 590W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Ixys DE275-501N16A Datasheet
Download the complete datasheet for Ixys DE275-501N16A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
