The Ixys DLA100B800LB is a silicon bridge rectifier diode with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has 9 terminals and is a dual terminal device. The diode element is made of silicon and is a bridge rectifier diode. The maximum reverse voltage is 800V and the maximum power dissipation is 150W.
Ixys DLA100B800LB technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 9 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 800 |
| Power Dissipation-Max | 150 |
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Ixys DLA100B800LB to view detailed technical specifications.
No datasheet is available for this part.