The Ixys DLA100B800LB is a silicon bridge rectifier diode with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has 9 terminals and is a dual terminal device. The diode element is made of silicon and is a bridge rectifier diode. The maximum reverse voltage is 800V and the maximum power dissipation is 150W.
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Technical Specifications
Ixys DLA100B800LB technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 9 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 4 |
| Diode Element Material | SILICON |
| Diode Type | BRIDGE RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 800 |
| Power Dissipation-Max | 150 |
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Ixys DLA100B800LB Datasheet
Download the complete datasheet for Ixys DLA100B800LB to view detailed technical specifications.
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