FDM47-06KC5

Power Field-Effect Transistor, 47A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS, I4PAK-5

MountingThrough Hole

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Ixys FDM47-06KC5 technical specifications.

Continuous Drain Current (ID)

47A

Drain to Source Voltage (Vdss)

600V

Input Capacitance

6.8nF

Max Operating Temperature

150°C

Min Operating Temperature

-55°C

Mount

Through Hole

Packaging

Rail/Tube

Rds On Max

45mR

RoHS Compliant

Yes

Series

CoolMOS™, HiPerDyn™

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.