Ixys
FID35-06C
Insulated Gate Bipolar Transistor, 38A I(C), 600V V(BR)CES, N-Channel, ISOPLUS, I4PAC-5
MountingThrough Hole
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Technical Specifications
Ixys FID35-06C technical specifications.
General
Collector Emitter Breakdown Voltage
600V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.4V
Input Type
STANDARD
Max Collector Current
38A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Package Quantity
24
Packaging
Rail/Tube
Reverse Recovery Time
50ns
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Ixys FID35-06C Datasheet
Download the complete datasheet for Ixys FID35-06C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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