The Ixys FID35-06C is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 38A. It has a maximum power dissipation of 125W and can operate within a temperature range of -55°C to 150°C. The device is packaged in a through-hole configuration and is compliant with RoHS regulations. The Ixys FID35-06C is suitable for use in high-power applications that require a high current and voltage rating.
MountingThrough Hole
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Technical Specifications
Ixys FID35-06C technical specifications.
General
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.4V |
| Input Type | STANDARD |
| Max Collector Current | 38A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Through Hole |
| Package Quantity | 24 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 50ns |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Ixys FID35-06C Datasheet
Download the complete datasheet for Ixys FID35-06C to view detailed technical specifications.
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