The Ixys IRFP250 is a N-CHANNEL MOSFET with a Drain to Source Breakdown Voltage of 200V and a Continuous Drain Current of 30A. It has a maximum power dissipation of 190W and is packaged in a TO-247AD flange mount package. The device operates over a temperature range of -55°C to 150°C and is lead free. It is suitable for high power applications.
PackageTO-247AD
MountingThrough Hole
PolarityN-CHANNEL
Power190W
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Technical Specifications
Ixys IRFP250 technical specifications.
General
| Package/Case | TO-247AD |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 85mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 98ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.97nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| Rds On Max | 85mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 110ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Ixys IRFP250 Datasheet
Download the complete datasheet for Ixys IRFP250 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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