The IXA20RG1200DHGLB is a surface mount insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.2kV and a maximum collector current of 32A. It has a maximum power dissipation of 125W and is packaged in a tray with 45 devices per package. The transistor is designed for use in standard applications and is available from Ixys.
PackageSMD/SMT
MountingSurface Mount
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Technical Specifications
Ixys IXA20RG1200DHGLB technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector-emitter Voltage-Max | 2.1V |
| Input Type | STANDARD |
| Max Collector Current | 32A |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Package Quantity | 45 |
| Packaging | Tray |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXA20RG1200DHGLB Datasheet
Download the complete datasheet for Ixys IXA20RG1200DHGLB to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.