The IXA4I1200UC is a 1.2kV insulated gate bipolar transistor with a maximum collector current of 9A and a maximum power dissipation of 45W. It is packaged in a TO-252-3 surface mount package and is available in quantities of 2500 on tape and reel. The device is RoHS compliant and suitable for use in a variety of applications. The transistor has a collector-emitter breakdown voltage of 1.2kV and a maximum collector-emitter voltage of 2.1V. It is designed for use in high-power switching applications.
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
Ixys IXA4I1200UC technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector-emitter Voltage-Max | 2.1V |
| Input Type | STANDARD |
| Max Collector Current | 9A |
| Max Power Dissipation | 45W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXA4I1200UC Datasheet
Download the complete datasheet for Ixys IXA4I1200UC to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.