The IXBF15N300C is a high-power insulated gate bipolar transistor with a collector-emitter breakdown voltage of 3kV and a maximum collector current of 37A. It has a maximum power dissipation of 300W and is packaged in a through-hole configuration. The device is suitable for high-power applications and is available in quantities of 30 per rail or tube packaging.
MountingThrough Hole
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Technical Specifications
Ixys IXBF15N300C technical specifications.
General
| Collector Emitter Breakdown Voltage | 3kV |
| Collector-emitter Voltage-Max | 6V |
| Input Type | STANDARD |
| Max Collector Current | 37A |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 706ns |
| Series | BIMOSFET™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXBF15N300C Datasheet
Download the complete datasheet for Ixys IXBF15N300C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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