The IXBF40N160 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.6kV and a maximum collector current of 28A. It is packaged in the I4PAC-3 package type and is available in quantities of 24 per rail/tube. The transistor is RoHS compliant and has a maximum power dissipation of 250W. It operates over a temperature range of -55°C to 150°C and has a turn-off delay time of 300ns and a turn-on delay time of 200ns.
MountingThrough Hole
Power250W
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Technical Specifications
Ixys IXBF40N160 technical specifications.
General
| Collector Emitter Breakdown Voltage | 1.6kV |
| Collector Emitter Saturation Voltage | 6.2V |
| Collector Emitter Voltage (VCEO) | 1.6kV |
| Collector-emitter Voltage-Max | 7.1V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 28A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Package Quantity | 24 |
| Packaging | Rail/Tube |
| Power Dissipation | 250W |
| RoHS Compliant | Yes |
| Series | BIMOSFET™ |
| Turn-Off Delay Time | 300ns |
| Turn-On Delay Time | 200ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXBF40N160 Datasheet
Download the complete datasheet for Ixys IXBF40N160 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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