N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a 30A maximum collector current and 3000V collector-emitter breakdown voltage. This through-hole mounted component is housed in a TO-247 plastic package with a maximum collector-emitter voltage of 3.2V. It offers a maximum power dissipation of 160W and a reverse recovery time of 1.4µs. The device is RoHS compliant and supplied in rail/tube packaging.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXBH12N300 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 3kV |
| Collector-emitter Voltage-Max | 3.2V |
| Input Type | STANDARD |
| Max Collector Current | 30A |
| Max Power Dissipation | 160W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 1.4us |
| RoHS Compliant | Yes |
| Series | BIMOSFET™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXBH12N300 Datasheet
Download the complete datasheet for Ixys IXBH12N300 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.