N-Channel Insulated Gate Bipolar Transistor (IGBT) with a 1.7kV Collector-Emitter Breakdown Voltage and 40A Max Collector Current. Features a 150°C Max Operating Temperature, 250W Max Power Dissipation, and TO-247AD package for through-hole mounting. Includes a 1.32µs Reverse Recovery Time and 160ns Turn-Off Delay Time. RoHS compliant and lead-free.
PackageTO-247AD
Current Rating16A
MountingThrough Hole
Power150W
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Technical Specifications
Ixys IXBH16N170 technical specifications.
General
| Package/Case | TO-247AD |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Collector Emitter Voltage (VCEO) | 1.7kV |
| Collector-emitter Voltage-Max | 3.3V |
| Current Rating | 16A |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 40A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Bulk |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Reverse Recovery Time | 1.32us |
| RoHS Compliant | Yes |
| Series | BIMOSFET™ |
| Turn-Off Delay Time | 160ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 1.7kV |
| Weight | 0.229281oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXBH16N170 Datasheet
Download the complete datasheet for Ixys IXBH16N170 to view detailed technical specifications.
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