N-Channel Insulated Gate Bipolar Transistor (IGBT) for through-hole mounting. Features a 1.7kV Collector-Emitter Breakdown Voltage (V(BR)CES) and a 16A continuous collector current rating. This component offers a maximum power dissipation of 150W and operates within a temperature range of -55°C to 150°C. It is supplied in a TO-247-3 package and is RoHS compliant.
PackageTO-247-3
Current Rating16A
MountingThrough Hole
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Technical Specifications
Ixys IXBH16N170A technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Collector Emitter Voltage (VCEO) | 1.7kV |
| Collector-emitter Voltage-Max | 6V |
| Current Rating | 16A |
| Height | 21.46mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 16.26mm |
| Max Collector Current | 16A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Bulk |
| Radiation Hardening | No |
| Reverse Recovery Time | 360ns |
| RoHS Compliant | Yes |
| Series | BIMOSFET™ |
| Turn-Off Delay Time | 160ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 1.7kV |
| Weight | 0.229281oz |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXBH16N170A Datasheet
Download the complete datasheet for Ixys IXBH16N170A to view detailed technical specifications.
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