N-Channel Insulated Gate Bipolar Transistor (IGBT) for through-hole mounting. Features a 1.7kV Collector-Emitter Breakdown Voltage (V(BR)CES) and a 16A continuous collector current rating. This component offers a maximum power dissipation of 150W and operates within a temperature range of -55°C to 150°C. It is supplied in a TO-247-3 package and is RoHS compliant.
PackageTO-247-3
Current Rating16A
MountingThrough Hole
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Technical Specifications
Ixys IXBH16N170A technical specifications.
General
Package/Case
TO-247-3
Collector Emitter Breakdown Voltage
1.7kV
Collector Emitter Voltage (VCEO)
1.7kV
Collector-emitter Voltage-Max
6V
Current Rating
16A
Height
21.46mm
Input Type
STANDARD
Lead Free
Lead Free
Length
16.26mm
Max Collector Current
16A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Package Quantity
30
Packaging
Bulk
Radiation Hardening
No
Reverse Recovery Time
360ns
RoHS Compliant
Yes
Series
BIMOSFET™
Turn-Off Delay Time
160ns
Turn-On Delay Time
15ns
DC Rated Voltage
1.7kV
Weight
0.229281oz
Width
5.3mm
Compliance
RoHS
Compliant
Datasheet
Ixys IXBH16N170A Datasheet
Download the complete datasheet for Ixys IXBH16N170A to view detailed technical specifications.
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