The IXBH20N300 is a high-power insulated gate bipolar transistor with a collector-emitter breakdown voltage of 3kV and a maximum collector current of 50A. It is packaged in a TO-247-3 plastic package and is suitable for through-hole mounting. The device is RoHS compliant and lead-free. It has a maximum power dissipation of 250W and a reverse recovery time of 1.35us.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXBH20N300 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 3kV |
| Collector-emitter Voltage-Max | 3.2V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 50A |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 1.35us |
| RoHS Compliant | Yes |
| Series | BIMOSFET™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXBH20N300 Datasheet
Download the complete datasheet for Ixys IXBH20N300 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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