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Technical Specifications
Ixys IXBH24N170 technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Collector-emitter Voltage-Max | 2.5V |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 1.4R |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Type | STANDARD |
| Max Collector Current | 60A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 38W |
| Reverse Recovery Time | 1.06us |
| RoHS Compliant | Yes |
| Series | BIMOSFET™ |
| Turn-Off Delay Time | 65ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXBH24N170 Datasheet
Download the complete datasheet for Ixys IXBH24N170 to view detailed technical specifications.
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