The IXBH28N170A is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 1.7kV and a maximum collector current of 30A. It features a TO-247-3 package and is designed for through-hole mounting. The device operates over a temperature range of -55°C to 150°C and is RoHS compliant. The IXBH28N170A is suitable for high-power applications requiring a high voltage and current rating.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXBH28N170A technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Collector Emitter Saturation Voltage | 4.7V |
| Collector-emitter Voltage-Max | 6V |
| Input Type | STANDARD |
| Max Collector Current | 30A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 360ns |
| RoHS Compliant | Yes |
| Series | BIMOSFET™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXBH28N170A Datasheet
Download the complete datasheet for Ixys IXBH28N170A to view detailed technical specifications.
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