N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 3000V Collector-Emitter Breakdown Voltage and a maximum Collector Current of 80A. This through-hole mounted component, housed in a TO-247 plastic package, offers a maximum power dissipation of 400W and operates within a temperature range of -55°C to 150°C. It includes a reverse recovery time of 1.5µs and is RoHS compliant.
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| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 3kV |
| Collector-emitter Voltage-Max | 3.2V |
| Input Type | STANDARD |
| Max Collector Current | 80A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 1.5us |
| RoHS Compliant | Yes |
| Series | BIMOSFET™ |
| RoHS | Compliant |
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