N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. Features a 3000V Collector Emitter Breakdown Voltage (V(BR)CES) and a maximum continuous Collector Current (I(C)) of 130A. This through-hole component is housed in a TO-264 package, offering a maximum power dissipation of 625W. Operating across a wide temperature range from -55°C to 150°C, it boasts a reverse recovery time of 1.9µs. The device is RoHS compliant and lead-free.
PackageTO-264
MountingThrough Hole
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Technical Specifications
Ixys IXBK55N300 technical specifications.
General
| Package/Case | TO-264 |
| Collector Emitter Breakdown Voltage | 3kV |
| Collector-emitter Voltage-Max | 3.2V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 130A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| Reverse Recovery Time | 1.9us |
| RoHS Compliant | Yes |
| Series | BIMOSFET™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXBK55N300 Datasheet
Download the complete datasheet for Ixys IXBK55N300 to view detailed technical specifications.
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