The IXBK64N250 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 2.5kV and a maximum collector current of 75A. It has a maximum power dissipation of 735W and is packaged in a TO-264-3 case for through-hole mounting. The device is lead-free and RoHS compliant, making it suitable for use in a variety of applications. The transistor is available in a package quantity of 25 and is supplied in a rail/tube packaging format.
PackageTO-264-3
MountingThrough Hole
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Technical Specifications
Ixys IXBK64N250 technical specifications.
General
| Package/Case | TO-264-3 |
| Collector Emitter Breakdown Voltage | 2.5kV |
| Collector-emitter Voltage-Max | 3V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 75A |
| Max Power Dissipation | 735W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXBK64N250 Datasheet
Download the complete datasheet for Ixys IXBK64N250 to view detailed technical specifications.
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