N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a 1700V Collector-Emitter Breakdown Voltage and a maximum Collector Current of 200A. This through-hole mounted component, housed in a TO-264 package, offers a maximum power dissipation of 1.04kW and a Collector-Emitter Voltage (VCEO) of 1.7kV. It operates across a wide temperature range from -55°C to 150°C with a reverse recovery time of 1.5µs. RoHS compliant.
PackageTO-264
MountingThrough Hole
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Technical Specifications
Ixys IXBK75N170 technical specifications.
General
| Package/Case | TO-264 |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Collector Emitter Voltage (VCEO) | 1.7kV |
| Collector-emitter Voltage-Max | 3.1V |
| Input Type | STANDARD |
| Max Collector Current | 200A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.04kW |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 1.5us |
| RoHS Compliant | Yes |
| Series | BIMOSFET™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXBK75N170 Datasheet
Download the complete datasheet for Ixys IXBK75N170 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.