The IXBL64N250 is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 2.5kV and a maximum collector current of 116A. It has a maximum power dissipation of 500W and is packaged in the I5PAK-4 package type. The device is RoHS compliant and available in quantities of 25 in rail or tube packaging. It is suitable for use in high-power applications where a high current and voltage are required.
MountingThrough Hole
Quick Jump:
Technical Specifications
Ixys IXBL64N250 technical specifications.
General
| Collector Emitter Breakdown Voltage | 2.5kV |
| Collector-emitter Voltage-Max | 3V |
| Input Type | STANDARD |
| Max Collector Current | 116A |
| Max Power Dissipation | 500W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 160ns |
| RoHS Compliant | Yes |
| Series | BIMOSFET™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXBL64N250 Datasheet
Download the complete datasheet for Ixys IXBL64N250 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.