Ixys
IXBP5N160G
Insulated Gate Bipolar Transistor, 5.7A I(C), 1600V V(BR)CES, N-Channel, TO-220AB, PLASTIC PACKAGE-3
PackageTO-220-3
MountingThrough Hole
Quick Jump:
Technical Specifications
Ixys IXBP5N160G technical specifications.
General
Package/Case
TO-220-3
Collector Emitter Breakdown Voltage
1.6kV
Collector Emitter Saturation Voltage
4.9V
Collector Emitter Voltage (VCEO)
1.6kV
Collector-emitter Voltage-Max
7.2V
Input Type
STANDARD
Lead Free
Lead Free
Max Collector Current
5.7A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
68W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
RoHS Compliant
Yes
Series
BIMOSFET™
Turn-Off Delay Time
120ns
Turn-On Delay Time
140ns
Weight
0.08113oz
Compliance
RoHS
Compliant
Datasheet
Ixys IXBP5N160G Datasheet
Download the complete datasheet for Ixys IXBP5N160G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
