N-channel Insulated Gate Bipolar Transistor (IGBT) featuring a 1.7kV Collector-Emitter Breakdown Voltage and a 16A continuous collector current. This surface-mount device, housed in a TO-268-3 package, offers a maximum power dissipation of 150W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 15ns turn-on delay and a 220ns turn-off delay, with a 360ns reverse recovery time. The component is RoHS compliant and lead-free.
PackageTO-268-3
Current Rating16A
MountingSurface Mount
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Technical Specifications
Ixys IXBT16N170A technical specifications.
General
| Package/Case | TO-268-3 |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Collector Emitter Voltage (VCEO) | 1.7kV |
| Collector-emitter Voltage-Max | 6V |
| Current Rating | 16A |
| Height | 5.1mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 16.05mm |
| Max Collector Current | 16A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Package Quantity | 30 |
| Packaging | Bulk |
| Reverse Recovery Time | 360ns |
| RoHS Compliant | Yes |
| Series | BIMOSFET™ |
| Turn-Off Delay Time | 220ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 1.7kV |
| Weight | 0.158733oz |
| Width | 14mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXBT16N170A Datasheet
Download the complete datasheet for Ixys IXBT16N170A to view detailed technical specifications.
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