The IXBT20N300HV is a 3kV insulated gate bipolar transistor with a maximum collector current of 50A. It is packaged in a TO-268-3 surface mount package and is available in rail/Tube packaging. The device is RoHS compliant and features a reverse recovery time of 1.35us. It is designed for use in high-power applications and has a maximum power dissipation of 250W.
PackageTO-268-3
MountingSurface Mount
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Technical Specifications
Ixys IXBT20N300HV technical specifications.
General
| Package/Case | TO-268-3 |
| Collector Emitter Breakdown Voltage | 3kV |
| Collector-emitter Voltage-Max | 3.2V |
| Input Type | STANDARD |
| Max Collector Current | 50A |
| Max Power Dissipation | 250W |
| Mount | Surface Mount |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 1.35us |
| RoHS Compliant | Yes |
| Series | BIMOSFET™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXBT20N300HV Datasheet
Download the complete datasheet for Ixys IXBT20N300HV to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.