The IXBT32N300 is a high-power insulated gate bipolar transistor with a collector-emitter breakdown voltage of 3kV and a maximum collector current of 80A. It is packaged in a surface mount TO-268-3 package and is suitable for operation over a temperature range of -55°C to 150°C. The device is RoHS compliant and is part of the BIMOSFET series.
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| Package/Case | TO-268-3 |
| Collector Emitter Breakdown Voltage | 3kV |
| Collector-emitter Voltage-Max | 3.2V |
| Input Type | STANDARD |
| Max Collector Current | 80A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 400W |
| Mount | Surface Mount |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 1.5us |
| RoHS Compliant | Yes |
| Series | BIMOSFET™ |
| RoHS | Compliant |
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