IXBX50N360HV

High-voltage Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. Features a robust 360V collector-emitter voltage rating and a continuous collector current capability of 50A. Optimized for efficient switching performance with low on-state voltage drop and fast switching speeds. Ideal for use in power supplies, motor drives, and inverters requiring high power density and reliability.