The IXBX75N170A is an insulated gate bipolar transistor from Ixys with a collector-emitter breakdown voltage of 1.7kV and a maximum collector current of 110A. It is packaged in a 3-pin TO-247 case and is suitable for through-hole mounting. The device is RoHS compliant and has a maximum power dissipation of 1.04kW. It is available in quantities of 30 per rail or tube packaging.
PackageTO-247-3
MountingThrough Hole
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Technical Specifications
Ixys IXBX75N170A technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 1.7kV |
| Collector-emitter Voltage-Max | 6V |
| Input Type | STANDARD |
| Max Collector Current | 110A |
| Max Power Dissipation | 1.04kW |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Reverse Recovery Time | 360ns |
| RoHS Compliant | Yes |
| Series | BIMOSFET™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXBX75N170A Datasheet
Download the complete datasheet for Ixys IXBX75N170A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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