Ixys
IXDP35N60B
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Ixys IXDP35N60B technical specifications.
General
Package/Case
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2.1V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.7V
Height
9.15mm
Input Type
STANDARD
Length
10.66mm
Max Collector Current
60A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
RoHS Compliant
Yes
Series
IXDP35N60B
Weight
0.08113oz
Width
4.82mm
Compliance
RoHS
Compliant
Datasheet
Ixys IXDP35N60B Datasheet
Download the complete datasheet for Ixys IXDP35N60B to view detailed technical specifications.
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