Ixys
IXDR30N120
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, PLASTIC, ISOPLUS247, 3 PIN
PackageTO-247AD
MountingThrough Hole
Power200W
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Technical Specifications
Ixys IXDR30N120 technical specifications.
General
Package/Case
TO-247AD
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
2.4V
Collector Emitter Voltage (VCEO)
1.2kV
Collector-emitter Voltage-Max
2.9V
Input Type
STANDARD
Lead Free
Lead Free
Max Collector Current
50A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Power Dissipation
200W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
IXDR30N120
Turn-Off Delay Time
500ns
Turn-On Delay Time
100ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXDR30N120 Datasheet
Download the complete datasheet for Ixys IXDR30N120 to view detailed technical specifications.
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