N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a 40A maximum collector current and a 4000V collector-emitter breakdown voltage. This through-hole mounted device offers a low collector-emitter saturation voltage of 3V and a maximum power dissipation of 380W. Operating within a temperature range of -40°C to 125°C, it is RoHS compliant and lead-free.
MountingThrough Hole
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Technical Specifications
Ixys IXEL40N400 technical specifications.
General
| Collector Emitter Breakdown Voltage | 4kV |
| Collector Emitter Saturation Voltage | 3V |
| Collector Emitter Voltage (VCEO) | 4kV |
| Collector-emitter Voltage-Max | 3.2V |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 40A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 380W |
| Mount | Through Hole |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXEL40N400 Datasheet
Download the complete datasheet for Ixys IXEL40N400 to view detailed technical specifications.
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