The IXEN60N120D1 is a flange mount insulated gate bipolar transistor with a collector emitter breakdown voltage of 1.2kV and a maximum collector current of 100A. It has a maximum power dissipation of 445W and is packaged in a SOT-227-4 case. The transistor is RoHS compliant and has a turn-on delay time of 80ns and a turn-off delay time of 680ns. It operates over a temperature range of -40°C to 150°C and is suitable for use in high-power applications.
PackageSOT-227-4
MountingChassis Mount, Screw
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Technical Specifications
Ixys IXEN60N120D1 technical specifications.
General
| Package/Case | SOT-227-4 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Collector-emitter Voltage-Max | 2.7V |
| Input | Standard |
| Input Capacitance | 3.8nF |
| Lead Free | Lead Free |
| Max Collector Current | 100A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 445W |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | No |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 680ns |
| Turn-On Delay Time | 80ns |
| Weight | 1.340411oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXEN60N120D1 Datasheet
Download the complete datasheet for Ixys IXEN60N120D1 to view detailed technical specifications.
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