N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a 1200V Collector-Emitter Breakdown Voltage and a 50A continuous collector current. This through-hole mounted component offers a low Collector-Emitter Saturation Voltage of 2.2V and a maximum power dissipation of 200W. Designed for demanding applications, it operates within a temperature range of -55°C to 150°C and boasts fast switching characteristics with turn-on and turn-off delay times of 85ns and 440ns respectively. The device is RoHS compliant and packaged in bulk.
Package200
Current Rating50A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Ixys IXER35N120D1 technical specifications.
General
| Package/Case | 200 |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.2V |
| Collector Emitter Voltage (VCEO) | 2.2V |
| Collector-emitter Voltage-Max | 2.8V |
| Current Rating | 50A |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Max Collector Current | 50A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 200W |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 80ns |
| RoHS Compliant | Yes |
| Termination | Through Hole |
| Turn-Off Delay Time | 440ns |
| Turn-On Delay Time | 85ns |
| DC Rated Voltage | 1.2kV |
| Weight | 0.186952oz |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXER35N120D1 Datasheet
Download the complete datasheet for Ixys IXER35N120D1 to view detailed technical specifications.
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