N-Channel Insulated Gate Bipolar Transistor (IGBT) featuring a 1200V Collector-Emitter Breakdown Voltage and a 50A continuous collector current. This through-hole mounted component offers a low Collector-Emitter Saturation Voltage of 2.2V and a maximum power dissipation of 200W. Designed for demanding applications, it operates within a temperature range of -55°C to 150°C and boasts fast switching characteristics with turn-on and turn-off delay times of 85ns and 440ns respectively. The device is RoHS compliant and packaged in bulk.
Package200
Current Rating50A
MountingThrough Hole
PolarityNPN
Quick Jump:
Technical Specifications
Ixys IXER35N120D1 technical specifications.
General
Package/Case
200
Collector Emitter Breakdown Voltage
1.2kV
Collector Emitter Saturation Voltage
2.2V
Collector Emitter Voltage (VCEO)
2.2V
Collector-emitter Voltage-Max
2.8V
Current Rating
50A
Input Type
STANDARD
Lead Free
Lead Free
Max Collector Current
50A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200W
Mount
Through Hole
Package Quantity
30
Packaging
Bulk
Polarity
NPN
Power Dissipation
200W
Reach SVHC Compliant
No
Reverse Recovery Time
80ns
RoHS Compliant
Yes
Termination
Through Hole
Turn-Off Delay Time
440ns
Turn-On Delay Time
85ns
DC Rated Voltage
1.2kV
Weight
0.186952oz
Compliance
RoHS
Compliant
Datasheet
Ixys IXER35N120D1 Datasheet
Download the complete datasheet for Ixys IXER35N120D1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
