IXFA14N60P

600V 14A N-Channel MOSFET, 550mR Rds(on), TO-263

N-Channel Power MOSFET, 600V drain-source breakdown voltage, 14A continuous drain current, and 550mΩ maximum drain-source on-resistance. Features a 300W maximum power dissipation and operates from -55°C to 150°C. This silicon Metal-oxide Semiconductor FET is designed for surface mounting in a TO-263-3 package, offering fast switching with a 26ns fall time and 70ns turn-off delay. RoHS compliant and lead-free.

PackageTO-263-3

Current Rating14A

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Ixys IXFA14N60P technical specifications.

General

Package/Case	TO-263-3
Continuous Drain Current (ID)	14A
Current Rating	14A
Drain to Source Breakdown Voltage	600V
Drain to Source Resistance	550mR
Drain to Source Voltage (Vdss)	600V
Drain-source On Resistance-Max	550mR
Fall Time	26ns
Gate to Source Voltage (Vgs)	30V
Input Capacitance	2.5nF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	300W
Mount	Surface Mount
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	300W
Rds On Max	550mR
RoHS Compliant	Yes
Series	HiPerFET™, PolarHT™
Turn-Off Delay Time	70ns
DC Rated Voltage	600V