IXFA16N50P

N-Channel Power MOSFET, 500V Vds, 16A Continuous Drain Current (ID), and 400mΩ Max Drain-Source On-Resistance (Rds On). This silicon Metal-oxide Semiconductor FET features a 30V Gate-to-Source Voltage (Vgs) and a 5.5V Threshold Voltage. With a 300W Max Power Dissipation and a TO-263 surface mount package, it offers a 2.25nF Input Capacitance and fast switching characteristics with a 22ns Fall Time and 70ns Turn-Off Delay Time. Operating across a wide temperature range of -55°C to 150°C, this RoHS compliant component is designed for high-performance power applications.