IXYS

IXFA16N50P

Datasheet

500V 16A N-Channel MOSFET TO-263 400mR RdsOn

Ixys

IXFA16N50P

Name: IXFA16N50P Ixys
Brand: Ixys
SKU: IXFA16N50P

500V 16A N-Channel MOSFET TO-263 400mR RdsOn

N-Channel Power MOSFET, 500V Vds, 16A Continuous Drain Current (ID), and 400mΩ Max Drain-Source On-Resistance (Rds On). This silicon Metal-oxide Semiconductor FET features a 30V Gate-to-Source Voltage (Vgs) and a 5.5V Threshold Voltage. With a 300W Max Power Dissipation and a TO-263 surface mount package, it offers a 2.25nF Input Capacitance and fast switching characteristics with a 22ns Fall Time and 70ns Turn-Off Delay Time. Operating across a wide temperature range of -55°C to 150°C, this RoHS compliant component is designed for high-performance power applications.

PackageTO-263

Current Rating16A

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Ixys IXFA16N50P technical specifications.

General

Package/Case	TO-263
Continuous Drain Current (ID)	16A
Current Rating	16A
Drain to Source Breakdown Voltage	500V
Drain to Source Resistance	400mR
Drain to Source Voltage (Vdss)	500V
Drain-source On Resistance-Max	400mR
Fall Time	22ns
Gate to Source Voltage (Vgs)	30V
Input Capacitance	2.25nF
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	300W
Mount	Surface Mount
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	300W
Rds On Max	400mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	HiPerFET™, PolarHT™
Threshold Voltage	5.5V
Turn-Off Delay Time	70ns
DC Rated Voltage	500V