Ixys
IXFA20N50P3
Power Field-Effect Transistor, 20A I(D), 500V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263AA, 3 PIN
PackageTO-263-3
MountingSurface Mount
Quick Jump:
Technical Specifications
Ixys IXFA20N50P3 technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
20A
Drain to Source Voltage (Vdss)
500V
Input Capacitance
1.8nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
380W
Mount
Surface Mount
Packaging
Rail/Tube
Rds On Max
300mR
RoHS Compliant
Yes
Series
HiPerFET™, Polar3™
Compliance
RoHS
Compliant
Datasheet
Ixys IXFA20N50P3 Datasheet
Download the complete datasheet for Ixys IXFA20N50P3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
