N-Channel Power MOSFET, 1000V Vds, 4A Continuous Drain Current (ID), and 3 Ohm Drain-Source On-Resistance (Rds On). Features include a TO-263 surface-mount package, 150W maximum power dissipation, and operating temperatures from -55°C to 150°C. This silicon Metal-oxide Semiconductor FET offers a 1.05nF input capacitance and fast switching speeds with an 18ns fall time and 32ns turn-off delay. It is lead-free and RoHS compliant.
PackageTO-263
MountingSurface Mount
PolarityN-CHANNEL
Power150W
Quick Jump:
Technical Specifications
Ixys IXFA4N100Q technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 3R |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 3R |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.05nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 3R |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 32ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFA4N100Q Datasheet
Download the complete datasheet for Ixys IXFA4N100Q to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
