The IXFA4N60P3 is a high-power MOSFET from Ixys, featuring a maximum drain-to-source voltage of 600V and a continuous drain current of 4A. It is packaged in a TO-263-3 surface mount package and is suitable for operation over a temperature range of -55°C to 150°C. The device is RoHS compliant and has a maximum power dissipation of 114W. The IXFA4N60P3 is part of the HiPerFET and Polar3 series of power MOSFETs.
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
Ixys IXFA4N60P3 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Voltage (Vdss) | 600V |
| Input Capacitance | 365pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 114W |
| Mount | Surface Mount |
| Packaging | Rail/Tube |
| Rds On Max | 2.2R |
| RoHS Compliant | Yes |
| Series | HiPerFET™, Polar3™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFA4N60P3 Datasheet
Download the complete datasheet for Ixys IXFA4N60P3 to view detailed technical specifications.
No datasheet is available for this part.